Detailed Introduction of Polysilicon Thin Film High Voltage Solar Battery

Since the polycrystalline silicon thin-film battery uses far less silicon than monocrystalline silicon, it has no problem with efficiency degradation. And it is possible to prepare on cheap substrate materials, its cost is much lower than that of monocrystalline silicon cells, and its efficiency is higher than that of amorphous silicon thin film cells. Therefore, polysilicon thin film batteries will soon occupy a dominant position in the battery backup solar market. Next, let's take a look at the detailed introduction of polysilicon thin film High Voltage solar battery.

• Made into valuable High Voltage solar battery.

• The conversion efficiency of High Voltage solar batteries is improved.

Made into valuable High Voltage solar battery

The usual crystalline silicon High Voltage solar battery is made on a high-quality silicon wafer with a thickness of 350-450 μm, which is sawn from a pulled or cast silicon ingot. Therefore, more silicon material is consumed. To save materials, polysilicon films have been deposited on cheap substrates since the mid-1970s. However, due to the grain size of the grown silicon film, a valuable High Voltage Lithium Battery could not be produced. To obtain thin films with large-sized grains, people have not stopped researching and proposed many methods. At present, chemical vapor deposition methods are mostly used to prepare polycrystalline silicon thin-film cells, including low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) processes. In addition, liquid phase epitaxy (LPPE) and sputtering deposition methods can also be used to prepare polycrystalline silicon thin film batteries.

The conversion efficiency of High Voltage solar batteries is improved

Chemical vapor deposition mainly uses SiH2Cl2, SiHCl3, Sicl4, or SiH4 as the reaction gas, reacts in a certain protective atmosphere to form silicon atoms, and deposits them on the heated substrate. The substrate material is generally Si, SiO2, Si3N4, etc. However, studies have found that it is difficult to form larger grains on non-silicon substrates, and it is easy to form voids between grains. The way to solve this problem is to use LPCVD to deposit a thin layer of the amorphous silicon layer on the substrate first, and then anneal this layer of the amorphous silicon layer to obtain larger grains. A thick polysilicon film is then deposited on this seed. Therefore, recrystallization technology is undoubtedly a very important link. The technologies currently used mainly include solid phase crystallization and medium zone melting recrystallization. In addition to the recrystallization process, polycrystalline silicon thin film batteries are used. In addition, almost all the technologies for preparing monocrystalline silicon High Voltage solar batteries are adopted, so that the conversion efficiency of the High Voltage solar battery produced in this way is significantly improved.

The principle of the liquid phase epitaxy (LPE) method is to melt silicon in the matrix and lower the temperature to precipitate a silicon film. The China Optoelectronics Development Technology Center uses liquid-phase epitaxy to grow silicon grains on metallurgical-grade silicon wafers. And designed a new type of High Voltage solar battery similar to the crystalline silicon thin film High Voltage solar battery, which is called "silicon grain" LFP energy storage. However, performance reports have not yet been seen.

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